ipd800n06n g opti mos ? power-transistor features ? for fast switching converters and sync. rectification ? n-channel enhancement - normal level ? 175 c operating temperature ? avalanche rated ? pb-free lead plating, rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 16 a t c =100 c 11 pulsed drain current i d,pulse t c =25 c 1) 64 avalanche energy, single pulse e as i d =16 a, r gs =25 ? 43 mj reverse diode d v /d t d v /d t i d =16 a, v ds =48 v, d i /d t =200 a/s, t j,max =175 c 6 kv/s gate source voltage v gs 20 v power dissipation p tot t c =25 c 47 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 value 1) see figure 3 v ds 60 v r ds(on),max 80 m ? i d 16 a product summary type ipd800n06n g package pg-to252-3 marking 800n06n rev.1.3 page 1 2008-09-01
ipd800n06n g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 3.2 k/w smd version, device on pcb r thja minimal footprint - - 75 6 cm 2 cooling area 2) --50 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 60 - - v gate threshold voltage v gs(th) v ds = v gs , i d =16 a 2.1 3 4 zero gate voltage drain current i dss v ds =60 v, v gs =0 v, t j =25 c - 0.01 1 a v ds =60 v, v gs =0 v, t j =125 c - 1 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =16 a -5480 m gate resistance r g -1- transconductance g fs | v ds |>2| i d | r ds(on)max , i d =16 a 714 -s 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values rev.1.3 page 2 2008-09-01
ipd800n06n g parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss - 280 370 pf output capacitance c oss - 75 100 reverse transfer capacitance c rss -2233 turn-on delay time t d(on) - 7 11 ns rise time t r -3857 turn-off delay time t d(off) -2233 fall time t f -2740 gate char g e characteristics 3) gate to source charge q gs - 1.7 2.2 nc gate charge at threshold q g(th) - 0.8 1.1 gate to drain charge q gd - 3.3 4.9 switching charge q sw - 4.1 6.0 gate charge total q g -710 gate plateau voltage v plateau - 6.0 - v output charge q oss v dd =30 v, v gs =10 v -45 reverse diode diode continous forward current i s - - 16 a diode pulse current i s,pulse --64 diode forward voltage v sd v gs =0 v, i f =16 a, t j =25 c - 0.97 1.3 v reverse recovery time t rr -2531ns reverse recovery charge q rr -3544nc 3) see figure 16 for gate charge parameter definition v r =30 v, i f = i s , d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =30 v, f =1 mhz v dd =30 v, v gs =10 v, i d =16 a, r g =39 v dd =30 v, i d =16 a, v gs =0 to 10 v rev.1.3 page 3 2008-09-01
ipd800n06n g 1 power dissipation 2 drain current p tot =f( t c ); v gs v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 -1 t p [s] z thjc [k/w] 0 10 20 30 40 50 0 50 100 150 200 t c [c] p tot [w] 0 4 8 12 16 20 0 50 100 150 200 t c [c] i d [a] rev.1.3 page 4 2008-09-01
ipd800n06n g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 5 v 5.5 v 6 v 6.5 v 7 v 10 v 20 v 0 50 100 150 200 250 0102030 i d [a] r ds(on) [m ] 25 c 175 c 0 5 10 15 20 0246 v gs [v] i d [a] 0 4 8 12 16 20 0102030 i d [a] g fs [s] 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 10 v 20 v 0 10 20 30 012345 v ds [v] i d [a] rev.1.3 page 5 2008-09-01
ipd800n06n g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =16 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 40 80 120 160 200 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ] 16 a 160 a 0 1 2 3 4 5 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 3 10 2 10 1 0 1020304050 v ds [v] c [pf] 25 c 175 c 25c 98% 175c 98% 10 2 10 1 10 0 10 -1 0123 v sd [v] i f [a] rev.1.3 page 6 2008-09-01
ipd800n06n g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 v gs =f( q gate ); i d =16 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 12 v 30 v 48 v 0 2 4 6 8 10 12 0246810 q gate [nc] v gs [v] 50 55 60 65 70 75 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 10 3 10 2 10 1 10 0 10 2 10 1 10 0 t av [s] i av [a] rev.1. 3 page 7 2008-09-01
ipd800n06n g pg-to252-3: outline rev.1.3 page 8 2008-09-01
rev.1.3 page 9 2008-09-01 ipd800n06n g
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